MBRD1045

Technical Data Data Sheet N0803, Rev. A MBRD1045 SCHOTTKY RECTIFIER MBRD1045 DPAK Circuit Diagram Features  150℃ TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  “-A” is an AEC-Q101 qualified device  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Applications  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection  Battery charging Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Peak One Cycle Non-Repetitive Surge Current Symbol VRRM VRWM VR IF (AV) IFSM Condition - 50% duty cycle @Tc=105°C, rectangular wave form 8.3ms, Half Sine pulse Max. 45 10 150 Units V A A Electrical Characteristics: Characteristics Forward Voltage Drop* Reverse Current * Junction Capacitance * Pulse width < 300 µs, duty cycle < 2% Symbol VF1 VF2 IR1 IR2 CT Condition @10A, Pulse, TJ = 25 C @10A, Pulse, TJ = 125 C @VR = rated VR, TJ = 25 C @VR = rated VR , TJ = 125 C @VR = 5.0V, TC = 25 C fSIG = 1MHz Typ. 0.58 0.55 0.3 9 280 Max. 0.7 0.6 1.0 15 400 Units V V mA mA pF  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ sm...