TGA2817-SM

Applications Military Radar Commercial Radar Wideband Amplifiers TGA2817-SM S-Band 60 W GaN Power Amplifier Product Features Frequency Range: 2.9 – 3.5 GHz Pout: > 48 dBm (at Pin = 24 dBm) Large Signal Gain: > 24 dB (at Pin = 24 dBm) PAE: > 54 % (at Pin = 24 dBm) Bias: VD = 28 V, IDQ = 200 mA, VG = −2.8 V (Typ) Package Dimensions: 7.00 x 7.00 x 0.85 mm General Description TriQuint’s TGA2817-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency. The TGA2817-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The TGA2817-SM is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems. Lead-free and RoHS compliant. Evaluation board available on request. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12 36 35 34 33 32 31 RF Out 30 RF Out 29 28 27 26 25 13 14 15 16 17 18 19 20 21 22 23 24 Pad Configuration Pad Number Symbol 6, 7 RF Input 13, 48 VG1 15, 46 VD1 17, 44 VG2 23, 38 VD2 30, 31 RF Output 1-5, 8-12, 14, 16, 18-22, 24-29, 32-37, 39-43, 45, 47,...