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TGA2814-SM

TriQuint Semiconductor

GaN Power Amplifier

Applications • Military Radar • Commercial Radar • Wideband Amplifiers TGA2814-SM 3.1 – 3.5 GHz 80W GaN Power Amplifier...


TriQuint Semiconductor

TGA2814-SM

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Description
Applications Military Radar Commercial Radar Wideband Amplifiers TGA2814-SM 3.1 – 3.5 GHz 80W GaN Power Amplifier Product Features Frequency Range: 3.1 – 3.5 GHz Output Power: 49.5 dBm (at Pin = 25 dBm) Power Gain > 24 dB (at Pin = 25 dBm) PAE: 55% (at Pin = 25 dBm) Bias: VD = 30 V, IDQ = 200 mA, VG = –2.90 V Typical Package Dimensions: 7.0 x 7.0 x 0.85 mm General Description TriQuint’s TGA2814-SM is a high-power, S-band amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).The TGA2814-SM covers 3.1 – 3.5 GHz and provides > 80 W of saturated output power, 24 dB of large-signal gain, and achieves 55 % power-added efficiency. The TGA2814-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and performs well under pulse operation. With DC blocking capacitors on both RF ports, which are matched to 50 ohms, the TGA2814-SM is ideal for both commercial and military radar systems. Lead-free and RoHS compliant. Evaluation boards are available on request. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12 Pad Con13f1ig4 1u5r1a6 t1i7o1n8 19 20 21 22 23 24 Pad No. 1-5, 8-12, 14, 16, 18-21, 2429, 32-37, 40-43, 45, 47, 49 6, 7 13, 48 15, 46 17, 44 22, 23, 38, 39 30, 31 Symbol GND RF Input VG1 VD1 VG2 VD2 RF Output 36 35 34 33 32 31 RF Out 30 RF Out 29 28 27 26 25 Ordering Informat...




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