TGA2622-CP

Applications  Weather and Marine Radar TGA2622-CP 9 – 10 GHz 35 W GaN Power Amplifier Product Features  Frequency Range: 9 – 10 GHz  PSAT: 45.5 dBm @ PIN = 18 dBm  PAE: >43% @ PIN = 18 dBm  Power Gain: 27.5 dB @ PIN = 18 dBm  Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10 %)  Package Dimensions: 15.2 x 15.2 x 3.5 mm  Package base is pure Cu offering superior thermal management Functional Block Diagram 1 10 29 38 47 56 General Description TriQuint’s TGA2622-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process. Operating from 9 – 10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB. The TGA2622-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and CW conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2622-CP is ideally suited for both commercial and defense applications. Lead-free and RoHS compliant. Evaluation boards are available upon request. Pad Configuration Pad No. 1, 5 2, 4, 7, 9 3 6, 10 8 Symbol VG GND RF In VD RF Out Ordering Information Part TGA2622-CP ECCN Description 3A001.b.2.b 9 – 10 GHz 35 W GaN Power Amplifier Preliminary Datasheet: Rev - 11-03-14 © 2014 TriQuint ...