GaN Power Amplifier
Applications
Commercial and military radar
TGA2583
2.7 – 3.7GHz 10W GaN Power Amplifier
Product Features
Frequency...
Description
Applications
Commercial and military radar
TGA2583
2.7 – 3.7GHz 10W GaN Power Amplifier
Product Features
Frequency Range: 2.7 – 3.7GHz PSAT: 40.5dBm at 25V PAE: 54% Small Signal Gain: 33dB Input Return Loss: >18dB Output Return Loss: >12dB Bias: VD = 25-32V (CW or Pulsed), IDQ = 175mA, VG
= -2.3V Typical Pulsed VD: PP = 1ms, DC = 10% Chip Dimensions: 3.0 x 1.9 x 0.10 mm
Functional Block Diagram
2 34
56
1
J1 RF In
7
J2 RF Out
General Description
TriQuint’s TGA2583 is an S-band MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 2.7-3.7GHz, the TGA2583 provides 10W of saturated output power and 33dB of small signal gain while achieving 54% poweradded efficiency. Higher power can be achieved at the expense of PAE by increasing the drain voltage.
The TGA2583 is ideal for phase array S-band radars and can support both short pulse and CW conditions.
Both RF ports have integrated DC blocking capacitors and are fully matched to 50ohms.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1 2 3, 5 4 6 7
Symbol
RF In VG1 VG2 VD1 VD2 RF Out
Ordering Information
Part
TGA2583
ECCN
EAR99
Description
2.7 – 3.7GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev B 02-20-15 © 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2583
2.7 – 3.7GHz 10W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD) Gate Voltage Range (VG) Drain Curren...
Similar Datasheet