TGA2576-2-FL

Applications  Communications  Electronic Warfare  Test Instrumentation  EMC Amplifier TGA2576-2-FL 2.5 to 6GHz 40W GaN Power Amplifier Product Features  Frequency Range: 2.5 to 6 GHz  PSAT: 46.5 dBm @ PIN = 26dBm, CW  PAE: 36%  Small Signal Gain: 29 dB  Bias: VD = 30 V, IDQ = 1.55 A, VG = −2.5 V Typical  Dimensions: 11.4 x 17.3 x 3.0 mm. Functional Block Diagram General Description TriQuint’s TGA2576-2-FL is a wideband power amplifier fabricated on TriQuint’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain. For ideal thermal management and handling, the TGA2576-2-FL is offered in a CuW-based flanged packaged and can operate in both CW and pulsed modes. Both RF ports are fully matched to 50Ω, the TGA2576-2FL is ideally suited to support a variety of commercial and defense related applications. Lead-free and RoHS compliant Evaluation Boards are available up on request. Pin Configuration Pin No. 1, 5 2, 4, 7, 9 3 6, 10 8 Symbol VG N/C RF IN VD RF OUT Ordering Information Part ECCN Description TGA2576-2-FL 3A001.b.2.a 2.5 to 6GHz 40W GaN PA Preliminary Datasheet: Rev A 01-8-15 © 2015 TriQuint - 1 of 11 - Disclaimer: Subject to change without notice www.triquint.com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS...