C945

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN ) TO-92 FEATURE z Excellent hFE linearity z Low noise z Complementary to A733 1.EMITTER 2.COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 400 125 -55-125 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Test conditions Min Typ Max Unit V(BR)CBO IC=1mA , IE=0 60 V V(BR)CEO V(BR)EBO ICBO ICEO IC=100μA , IB=0 IE=100 μA, IC=0 VCB=60V, IE=0 VCE=45V, IB=0 50 V 5V 0.1 μA 0.1 μA IEBO VEB=5V ,IC=0 0.1 μA hFE(1) VCE=6V , IC=1mA 70 700 hFE(2) VCE=6V , IC=0.1mA 40 VCE(sat) IC=100mA, IB=10mA 0.3 V VBE(sat) IC=100mA, IB=10mA 1V fT VCE=6V,IC=10mA,f=30MHz 200 MHz Cob VCB=10V,IE=0,f=1MHz NF VCE=6V,IC=0.1mA RG=10kΩ,f=1MHz 3.0 pF 10 dB CLASSIFICATION OF hFE(1) Rank O Range 70-140 Y 120-240 GR 200-400 BL 350-700 A,Jan,2011 ...