SXB4089Z

SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier SXB4089Z 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied  GaAs HBT GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dBm Typical IP3, P1dB, Gain 50 45 OIP3 40 P1dB 35 Gain 30 25 20 15 10 5 0 880 MHz 1960 MHz 2140 MHz Features  On-Chip Active Bias Control, Single 5V Supply  High Output 3rd Order Intercept:  +45dBm Typ.  High P1dB: +28dBm Typ.  High Gain: +20dB at 880MHz  Low RTH: 25°C/W Typ.  Robust 2000V ESD, Class 2 Applications  WCDMA, PCS, Cellular Systems  Multi-Carrier Applications Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 18.0 20.0 22.0 dBm 880MHz 15.0 dBm 1960MHz 12.5 14.0 15.5 dBm 2140MHz Output Power at 1dB Compression, 27.5 dBm 880MHz 27.5 dBm 1960MHz 26.0 27.5 dBm 2140MHz Output Third Order Intercept Point 41.5 43.5 dBm 880MHz 44.5 dBm 1960MHz 42.5 44.5 dBm 214...