SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier
SXB4089Z
400MHz to 2500MHz ½W MEDIUM POWER InGaP/G...
SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier
SXB4089Z
400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar
transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
dBm
Typical IP3, P1dB, Gain 50
45 OIP3 40 P1dB 35 Gain
30
25
20
15
10
5
0
880 MHz
1960 MHz
2140 MHz
Features
On-Chip Active Bias Control, Single 5V Supply
High Output 3rd Order Intercept:
+45dBm Typ. High P1dB: +28dBm Typ. High Gain: +20dB at 880MHz Low RTH: 25°C/W Typ. Robust 2000V ESD, Class 2
Applications
WCDMA, PCS, Cellular Systems
Multi-Carrier Applications
Parameter
Specification Min. Typ. Max.
Unit
Condition
Small Signal Gain
18.0
20.0
22.0
dBm
880MHz
15.0
dBm
1960MHz
12.5
14.0
15.5
dBm
2140MHz
Output Power at 1dB Compression,
27.5
dBm
880MHz
27.5
dBm
1960MHz
26.0
27.5
dBm
2140MHz
Output Third Order Intercept Point
41.5
43.5
dBm
880MHz
44.5
dBm
1960MHz
42.5
44.5
dBm
214...