SXB2089Z 5MHz to 2500 MHz Medium Power InGaP/GaAs HBT Amplifier
SXB2089Z
5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT A...
SXB2089Z 5MHz to 2500 MHz Medium Power InGaP/GaAs HBT Amplifier
SXB2089Z
5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5MHz to 2500MHz Cellular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Typical IP3, P1dB, Gain 50
45 IP3 IP3 IP3 40
35
30 25 P1dB Gain P1dB
P1dB
20
Gain
Gain
15
10
5
0
880 MHz
1960 MHz
2140 MHz
Features
High OIP3:+43dBm at 1960 MHz
P1dB:24dBm High Linearity/ACP Perfor-
mance Robust 2000V ESD, Class 2 SOT-89 Package
Applications
PA Driver Amplifier IF Amplifier Cellular, PCS, ISM, WLL,
W - CDMA
Parameter
Specification Min. Typ.
Small Signal Gain
Input VSWR
Output Power at 1dB Compression Third Order Intercept Point
Noise Figure
Channel Power IS-95
Thermal Resistance Device Operating Current
21.5 15.5
23.0 38.0 40.0
120
25.0 23.0 17.0 17.0 1.1 1.4 1.6 1.3 24.0 24.5 24.5 40.0 41.0 43.0 43.0 4.9 4.5 4.7 4.2 16.0 16.3 15.5 15.6 51.3 135
Test Conditions: TA=25°C, Z0=50POUT per tone=+11dBm...