DatasheetsPDF.com

SGB-2233Z

RF Micro Devices

DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK

PreliminarySGB-2233(Z) DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green,...


RF Micro Devices

SGB-2233Z

File Download Download SGB-2233Z Datasheet


Description
PreliminarySGB-2233(Z) DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar- lington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an exterOptimum Technology nal bias inductor choke is required for the application band. Matching® Applied Vbias NC NC VCC GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT Active NC Bias NC NC NC Si CMOS RFIN RFOUT Si BJT GaN HEMT NC NC InP HBT RF MEMS LDMOS Features „ High Reliability SiGe HBT Technology „ Robust Class 1C ESD „ Simple and Small Size „ P1dB=6.7dBm at 1950MHz „ IP3=19.0dBm at 1950MHz „ Low Thermal Resistance = 221 C/W Applications „ 3V Battery Operated Applications „ LO Buffer Amp „ RF Pre-Driver and RF Receive Path NC NC NC GND Parameter Specification Min. Typ. Small Signal Gai...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)