BC857B

General Purpose Transistors PNP Silicon BC856B, BC857B, BC858A These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO V BC856 −65 BC857 −45 BC858 −30 Collector-Base Voltage VCBO V BC856 −80 BC857 −50 BC858 −30 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (1 ms pulse) THERMAL CHARACTERISTICS VEBO IC ICM −5.0 −100 −130 V mAdc mA Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 150 mW 883 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. www.onsemi.com COLLECTOR 3 1 BASE 3 1 2 2 EMITTER SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM XX M G G 1 XX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Micro...