7.5V OPERATION SILICON RF POWER LDMOS FET
DATA SHEET
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AM...
Description
DATA SHEET
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply voltage.
FEATURES
High output power
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High linear gain
: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
Single supply
: VDS = 7.5 V MAX.
APPLICATIONS
460 MHz band radio systems 900 MHz band radio systems
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE5531079A
NE5531079A-A
79A (Pb-Free) W5 12 mm wide embossed taping Gate pin face the perforation side of the tape
NE5531079A-T1 NE5531079A-T1-A
12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 1 kpcs/reel
NE5531079A-T1A NE5531079A-T1A-A
12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 5 kpcs/reel
Remark To order evaluation samples, please contact y...
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