Document
SDU/D05N70Green
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
700V
5A
1.6 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU05N70HZ
TO-252
SDD05N70HS
TO-251S
SDD05N70HL
TO-251L
Marking Code SDU05N70 SDD05N70 SDD05N70
Delivery Mode Reel
Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Drain Current-Continuous IDM -Pulsed a
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
Limit 700 ±30
5 4.2 15 400 75 52.5
Units V V A A A mJ W W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2 °C/W 50 °C/W
Details are subject to change without notice.
1
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www.samhop.com.tw
SDU/D05N70
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=560V , VGS=0V VGS= ±30V , VDS=0V
700 V 1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=2.5A VDS=20V , ID=2.5A
234V 1.6 2 ohm 5S
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
926 pF 85 pF 11 pF
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=350V ID=1A VGS=10V RGEN=6 ohm
VDS=350V,ID=1A,VGS=10V
VDS=350V,ID=1A, VGS=10V
33 ns 18 ns 44 ns 17 ns 18 nC 2.9 nC 6.4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
0.75 1.4
V
Dec,24,2013
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SDU/D05N70
ID, Drain Current(A)
RDS(on)( Ω)
10 VGS = 10V
8 VGS = 6V
6 VGS = 5V
4
2 VGS = 4V
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3 2 V G S =10V
1
0 0.1 2
46
8
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.6
1.4
V DS =V G S ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Vth, Normalized Gate-Source Threshold Voltage
3
BVDSS, Normalized Drain-Source Breakdown Voltage
RDS(ON), On-Resistance Normalized
ID, Drain Current(A)
Ver 1.1
4.0
3.2 Tj=125 C
2.4
1.6 25 C -55 C
0.8
0 0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2 V G S =10V ID= 2.5A
1.8
1.4
1.0
0 0 25 50 75 100 125 150 Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with Drain Current and Temperature
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation with Temperature
Dec,24,2013
www.samhop.com.tw
SDU/D05N70
RDS(on)(Ω)
6
ID=2.5A
5
4 125 C
3 75 C
2 25 C
1
0 0 2 4 6 8 10
VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
1500
1250
1000
Ciss
750
500
250 C o s s Crss
0 0 10 20 30 40 50
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
C, Capacitance (pF)
Switching Time(ns)
100 10
TD(off ) TD(on)
Tr Tf
VDS=350V,ID=1A
VGS=10V 1
1 10
100
Rg, Gate Resistance(Ω) Figure 11. switching characteristics
Ver 1.1
20.0 125 C 25 C
10.0
5.0
Is, Source-drain current (A)
VGS, Gate to Source Voltage (V)
75 C
1.0 0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
8
VDS=350V ID=1A
6
4
2
0 0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
ID, Drain Current (A)
VGS=10V
Single Pulse
10 1
TC=25 C
R DS(ON) Limit
D1C0ms1ms 100u1s0us
0.1
0.01 0.1 1 10 100 1000
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe Operating Area
Dec,24,2013
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SDU/D05N70
Ver 1.1
V DS
L
RG
20V tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit F igure 13a.
V( BR )D S S tp
IAS
Unclamped Inductive Waveforms F igure 13b.
Normalized Transient Thermal Resistance
2
1 D =0 . 5
0.2
0.1 0.1 0.05
0.02
P DM
t1 t.