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SDU05N70 Dataheets PDF



Part Number SDU05N70
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDU05N70 DatasheetSDU05N70 Datasheet (PDF)

SDU/D05N70Green Product Sa mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 700V 5A 1.6 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU05N70HZ TO-252 SDD05N70HS TO-251S SDD05N70HL TO-251L .

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SDU/D05N70Green Product Sa mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 700V 5A 1.6 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU05N70HZ TO-252 SDD05N70HS TO-251S SDD05N70HL TO-251L Marking Code SDU05N70 SDD05N70 SDD05N70 Delivery Mode Reel Tube Tube RoHS Status Halogen Free Halogen Free Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a TC=25°C TC=70°C EAS Single Pulse Avalanche Energy c PD Maximum Power Dissipation TC=25°C TC=70°C Limit 700 ±30 5 4.2 15 400 75 52.5 Units V V A A A mJ W W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 °C/W 50 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDU/D05N70 Ver 1.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=560V , VGS=0V VGS= ±30V , VDS=0V 700 V 1 uA ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=2.5A VDS=20V , ID=2.5A 234V 1.6 2 ohm 5S DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz 926 pF 85 pF 11 pF SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=350V ID=1A VGS=10V RGEN=6 ohm VDS=350V,ID=1A,VGS=10V VDS=350V,ID=1A, VGS=10V 33 ns 18 ns 44 ns 17 ns 18 nC 2.9 nC 6.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13) 0.75 1.4 V Dec,24,2013 2 www.samhop.com.tw SDU/D05N70 ID, Drain Current(A) RDS(on)( Ω) 10 VGS = 10V 8 VGS = 6V 6 VGS = 5V 4 2 VGS = 4V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 6 5 4 3 2 V G S =10V 1 0 0.1 2 46 8 ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 V DS =V G S ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Vth, Normalized Gate-Source Threshold Voltage 3 BVDSS, Normalized Drain-Source Breakdown Voltage RDS(ON), On-Resistance Normalized ID, Drain Current(A) Ver 1.1 4.0 3.2 Tj=125 C 2.4 1.6 25 C -55 C 0.8 0 0 1.2 2.4 3.6 4.8 6.0 7.2 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3.0 2.6 2.2 V G S =10V ID= 2.5A 1.8 1.4 1.0 0 0 25 50 75 100 125 150 Tj( C) Tj, Junction Temperature ( C) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Dec,24,2013 www.samhop.com.tw SDU/D05N70 RDS(on)(Ω) 6 ID=2.5A 5 4 125 C 3 75 C 2 25 C 1 0 0 2 4 6 8 10 VGS, Gate-Sorce Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1500 1250 1000 Ciss 750 500 250 C o s s Crss 0 0 10 20 30 40 50 VDS, Drain-to Source Voltage(V) Figure 9. Capacitance C, Capacitance (pF) Switching Time(ns) 100 10 TD(off ) TD(on) Tr Tf VDS=350V,ID=1A VGS=10V 1 1 10 100 Rg, Gate Resistance(Ω) Figure 11. switching characteristics Ver 1.1 20.0 125 C 25 C 10.0 5.0 Is, Source-drain current (A) VGS, Gate to Source Voltage (V) 75 C 1.0 0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 VDS=350V ID=1A 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, Total Gate Charge(nC) Figure 10. Gate Charge ID, Drain Current (A) VGS=10V Single Pulse 10 1 TC=25 C R DS(ON) Limit D1C0ms1ms 100u1s0us 0.1 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Dec,24,2013 4 www.samhop.com.tw SDU/D05N70 Ver 1.1 V DS L RG 20V tp D .U .T IA S 0 .0 1 + - VDD Unclamped Inductive Test Circuit F igure 13a. V( BR )D S S tp IAS Unclamped Inductive Waveforms F igure 13b. Normalized Transient Thermal Resistance 2 1 D =0 . 5 0.2 0.1 0.1 0.05 0.02 P DM t1 t.


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