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SDD04N60 Dataheets PDF



Part Number SDD04N60
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDD04N60 DatasheetSDD04N60 Datasheet (PDF)

SDU/D04N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 4A 2.1 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU04N60HZ TO-252 Marking Code SDU04N60 Delivery Mode Reel Ro.

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SDU/D04N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 4A 2.1 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU04N60HZ TO-252 Marking Code SDU04N60 Delivery Mode Reel RoHS Status Halogen Free SDD04N60HS TO-251S SDD04N60 Tube Halogen Free SDD04N60HL TO-251L SDD04N60 Tube Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a e TC=25°C TC=100°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=100°C Limit 600 ±30 4 2.8 11.8 51 83 42 Units V V A A A mJ W W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 °C/W 50 °C/W Details are subject to change without notice. 1 May,20,2014 www.samhop.com.tw SDU/D04N60 Ver 2.2 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V 600 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=2A VDS=20V , ID=2A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=300V ID=1A VGS=10V RGEN=6 ohm VDS=300V,ID=1A,VGS=10V VDS=300V,ID=1A, VGS=10V Typ 3 2.1 3.5 500 60 12 20 17 24 12 11.2 2.2 4.9 Max Units 1 ±100 V uA nA 4V 2.6 ohm S pF pF pF ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature. 0.78 1.4 V May,20,2014 2 www.samhop.com.tw SDU/D04N60 ID, Drain Current(A) RDS(on)( Ω) 7 6 VGS = 10V VGS = 6V 5 4 3 VGS = 5V 2 1 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 6 5 4 3 V G S =10V 2 1 0 0.1 1 2 3 4 5 ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 V.


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