Document
SDU/D04N60Green
Product
Sa mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V 4A 2.1 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU04N60HZ
TO-252
Marking Code SDU04N60
Delivery Mode Reel
RoHS Status Halogen Free
SDD04N60HS
TO-251S
SDD04N60
Tube
Halogen Free
SDD04N60HL
TO-251L
SDD04N60
Tube
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=100°C
Limit 600 ±30
4 2.8 11.8 51 83 42
Units V V A A A mJ W W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8 °C/W 50 °C/W
Details are subject to change without notice.
1
May,20,2014
www.samhop.com.tw
SDU/D04N60
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=2A VDS=20V , ID=2A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V ID=1A VGS=10V RGEN=6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A, VGS=10V
Typ
3 2.1 3.5
500 60 12
20 17 24 12 11.2 2.2 4.9
Max Units
1 ±100
V uA nA
4V 2.6 ohm
S
pF pF pF
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature.
0.78 1.4
V
May,20,2014
2 www.samhop.com.tw
SDU/D04N60
ID, Drain Current(A)
RDS(on)( Ω)
7
6
VGS = 10V
VGS = 6V
5
4
3 VGS = 5V 2
1
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3 V G S =10V
2
1
0 0.1 1 2 3 4 5
ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V.