Document
SDU/D03N04Green
Product
Sa mHop Microelectronics C orp.
N-Channel Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
400V 2A 3.2 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU03N04HZ
TO-252
SDD03N04HS
TO-251S
SDD03N04HL
TO-251L
Marking Code SDU03N04 SDD03N04 SDD03N04
Delivery Mode Reel
Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Drain Current-Continuous a IDM -Pulsed b
TA=25°C TA=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C TA=70°C
Limit 400 ±30
2 1.5
6 10.4 42
27
Units V V A A A mJ W W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
3 °C/W 50 °C/W
Details are subject to change without notice.
1
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www.samhop.com.tw
SDU/D03N04
Ver 1.3
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V
400
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDD=200V ID=1A VGS=10V RGEN=25 ohm
VDS=200V,ID=1A,VGS=10V
VDS=200V,ID=1A, VGS=10V
Typ
3 3.2 0.9
185 31 6.1
13.4 12.2 21.5 5.6 4.36 1.28 1.48
Max Units
1 ±100
V uA nA
4V 3.8 ohm
S
pF pF pF
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12)
1 0.81 1.4
A V
Dec,24,2013
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SDU/D03N04
ID, Drain Current(A)
RDS(on)(Ω)
4.0
VGS = 10V 3.5
3.0 2.5 2.0 1.5
1.0 0.5
0 0
VGS = 6V VGS = 5V 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7
6
5 VGS = 10V
4
3
2
1 0 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
V DS =V G S ID=250uA
1.0
0.9
0.8
0.7
0.6 0.5
-50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Vth, Normalized Gate-Source Threshold Voltage
3
BVDSS, Normalized Drain-Source Breakdown Voltage
RDS(ON), On-Resistance Normalized
ID, Drain Current(A)
Ver 1.3
1.0
0.8 Tj=125 C
0.6
0.4 -55 C
25 C 0.2
0 0 1 2 3 4 56
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.5 V G S =10V
2.2 ID= 1A
1.9
1.6
1.3
1.0
0.7 0
25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with Drain Current and Temperature
1.3 ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation with Temperature
Dec,24,2013
www.samhop.com.tw
SDU/D03N04
RDS(on)(Ω)
9.0
ID=1A
7.5
6.0
4.5 125 C
3.0 75 C 25 C
1.5
0 0 2 4 6 8 10
VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
240
200
Ciss 160
120
80
Coss 40
Crss 0
0 10
20
30 40 50
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
C, Capacitance (pF)
VGS, Gate to Source Voltage (V)
Is, Source-drain current (A)
Ver 1.3
20.0
10.0
5.0
125 C
25 C
1.0 0
75 C
0.4 0.8 1.2 1.6 2.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 8 VDS=200V
ID=1A 6
4
2
0 0 2 4 6 8 10 Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
ID, Drain Current (A)
1
R DS(ON) Limit
1ms 10s 1s 100m10sms
0.1 DC
0.01 VGS=10V Single Pulse TA=25 C
0.001
0.1 1
10
100 1000
VDS, Drain-Source Voltage (V)
Figure 11. Maximum Safe Operating Area
4
Dec,24,2013
www.samhop.com.tw
SDU/D03N04
Ver 1.3
15V
VDS
L
DR IVE R
RG
20V tp
D .U .T IA S
0 .0 1
+ - VDD
A
Unclamped Inductive Test Circuit F igure 13a.
V( BR )D S S tp
IAS
Unclamped Inductive Waveforms F igure 13b.
Normalized Transient Thermal Resistance
2
1 D =0 . 5
0.2
0.1 0.1 0.05
0.02
P DM
t1 t2
0.01
1. R J JA (t)=r (t.