DatasheetsPDF.com

SDU03N04 Dataheets PDF



Part Number SDU03N04
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDU03N04 DatasheetSDU03N04 Datasheet (PDF)

SDU/D03N04Green Product Sa mHop Microelectronics C orp. N-Channel Field Effect Transistor Ver 1.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 2A 3.2 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU03N04HZ TO-252 SDD03N04HS TO-251S SDD03N04HL TO-251L Marking Code SDU03N04 SDD03N04.

  SDU03N04   SDU03N04


Document
SDU/D03N04Green Product Sa mHop Microelectronics C orp. N-Channel Field Effect Transistor Ver 1.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 2A 3.2 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU03N04HZ TO-252 SDD03N04HS TO-251S SDD03N04HL TO-251L Marking Code SDU03N04 SDD03N04 SDD03N04 Delivery Mode Reel Tube Tube RoHS Status Halogen Free Halogen Free Halogen Free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a IDM -Pulsed b TA=25°C TA=70°C EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TA=25°C TA=70°C Limit 400 ±30 2 1.5 6 10.4 42 27 Units V V A A A mJ W W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 3 °C/W 50 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDU/D03N04 Ver 1.3 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V 400 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=200V ID=1A VGS=10V RGEN=25 ohm VDS=200V,ID=1A,VGS=10V VDS=200V,ID=1A, VGS=10V Typ 3 3.2 0.9 185 31 6.1 13.4 12.2 21.5 5.6 4.36 1.28 1.48 Max Units 1 ±100 V uA nA 4V 3.8 ohm S pF pF pF ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12) 1 0.81 1.4 A V Dec,24,2013 2 www.samhop.com.tw SDU/D03N04 ID, Drain Current(A) RDS(on)(Ω) 4.0 VGS = 10V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 VGS = 6V VGS = 5V 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 7 6 5 VGS = 10V 4 3 2 1 0 0.7 1.4 2.1 2.8 3.5 ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 1.1 V DS =V G S ID=250uA 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Vth, Normalized Gate-Source Threshold Voltage 3 BVDSS, Normalized Drain-Source Breakdown Voltage RDS(ON), On-Resistance Normalized ID, Drain Current(A) Ver 1.3 1.0 0.8 Tj=125 C 0.6 0.4 -55 C 25 C 0.2 0 0 1 2 3 4 56 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2.5 V G S =10V 2.2 ID= 1A 1.9 1.6 1.3 1.0 0.7 0 25 50 75 100 125 150 Tj( C) Tj, Junction Temperature ( C) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Dec,24,2013 www.samhop.com.tw SDU/D03N04 RDS(on)(Ω) 9.0 ID=1A 7.5 6.0 4.5 125 C 3.0 75 C 25 C 1.5 0 0 2 4 6 8 10 VGS, Gate-Sorce Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 240 200 Ciss 160 120 80 Coss 40 Crss 0 0 10 20 30 40 50 VDS, Drain-to Source Voltage(V) Figure 9. Capacitance C, Capacitance (pF) VGS, Gate to Source Voltage (V) Is, Source-drain current (A) Ver 1.3 20.0 10.0 5.0 125 C 25 C 1.0 0 75 C 0.4 0.8 1.2 1.6 2.0 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 VDS=200V ID=1A 6 4 2 0 0 2 4 6 8 10 Qg, Total Gate Charge(nC) Figure 10. Gate Charge ID, Drain Current (A) 1 R DS(ON) Limit 1ms 10s 1s 100m10sms 0.1 DC 0.01 VGS=10V Single Pulse TA=25 C 0.001 0.1 1 10 100 1000 VDS, Drain-Source Voltage (V) Figure 11. Maximum Safe Operating Area 4 Dec,24,2013 www.samhop.com.tw SDU/D03N04 Ver 1.3 15V VDS L DR IVE R RG 20V tp D .U .T IA S 0 .0 1 + - VDD A Unclamped Inductive Test Circuit F igure 13a. V( BR )D S S tp IAS Unclamped Inductive Waveforms F igure 13b. Normalized Transient Thermal Resistance 2 1 D =0 . 5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 1. R J JA (t)=r (t.


SDD02N70 SDU03N04 SDD03N04


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)