Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP10N60
SDF10N60
Ver 1.1
PRODUCT S...
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
SDP10N60
SDF10N60
Ver 1.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V 10A 0.62 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP10N60HZ
TO-220
SDP10N60PZ
TO-220
SDF10N60HZ
TO-220F
SDF10N60PZ
TO-220F
Marking Code SDP10N60 10N60 SDF10N60 10N60
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP10N60 SDF10N60
VDS Drain-Source Voltage VGS Gate-Source Voltage
600 ±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
10 10 66
IDM -Pulsed a
40 40
EAS Single Pulse Avalanche Energy c
709
PD
Maximum Power Dissipation
TC=25°C TC=100°C
162 52 65 21
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
0.77 62.5
2.4 62.5
°C/W °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP10N60 SDF10N60
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-...