Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT S...
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V 8A 0.89 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP08N60HZ
TO-220
SDP08N60PZ
TO-220
SDF08N60HZ
TO-220F
SDF08N60PZ
TO-220F
Marking Code SDP08N60 08N60 SDF08N60 08N60
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N60 SDF08N60
VDS Drain-Source Voltage
600
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
88 5.7 5.7
IDM -Pulsed a
23 23
EAS Single Pulse Avalanche Energy c
400
PD
Maximum Power Dissipation
TC=25°C TC=100°C
150 50 75 25
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1 3 °C/W 62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP08N60 SDF08N60
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body...