SDF07N50T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 2.1
PRODUCT SUMMARY ...
SDF07N50T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
500V 7A 1.2 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220F Package.
D
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDF07N50PT
TO-220F
Marking Code 07N50T
Delivery Mode Tube
RoHS Status Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=100°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=100°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 500 ±30 7.0 4.9 20 225 31 16
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
4.8 °C/W 62.5 °C/W
Details are subject to change without notice.
1
Dec,31,2013
www.samhop.com.tw
SDF07N50T
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±30V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) gFS
Drain-Source On-State Resistance Forward Transconductance
VDS=VGS , ID=250uA VG...