Document
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP07N50
SDF07N50
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
500V 7A 0.76 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP07N50HZ
TO-220
SDP07N50PZ
TO-220
SDF07N50HZ
TO-220F
SDF07N50PZ
TO-220F
Marking Code SDP07N50 07N50 SDF07N50 07N50
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP07N50 SDF07N50
VDS Drain-Source Voltage VGS Gate-Source Voltage
500 ±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
77 4.9 4.9
IDM -Pulsed a
20 20
EAS Single Pulse Avalanche Energy c
6
PD
Maximum Power Dissipation
TC=25°C TC=100°C
88 29 44 15
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.7 5.1 62.5 62.5
°C/W °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP07N50 SDF07N50
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±30V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) gFS
Drain-Source On-State Resistance Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF) tf Qg Qgs Qgd
Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=3.5A VDS=20V , ID=3.5A
VDS=25V,VGS=0V f=1.0MHz
VDD=250V ID=1A VGS=10V RGEN= 6 ohm
VDS=250V,ID=1A,VGS=10V VDS=250V,ID=1A, VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12)
Typ Max Units
1 ±100
V uA nA
3 4V 0.76 0.93 ohm 7.6 S
916 pF 104 pF 16 pF
37 ns 20 ns 42 ns 15 ns 21 nC 3.6 nC 9 nC
0.81 1.4
V
Dec,24,2013
2 www.samhop.com.tw
ID, Drain Current(A)
SDP07N50 SDF07N50
20 VGS =10V
16 VGS =7V
12
8 VGS =6V
4 VGS =5V
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
ID, Drain Current(A)
Ver 2.1
9.0 7.2 5.4
3.6 T j=125 C
1.8
25 C
-55 C
0 0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
RDS(on)(Ω)
1.8
1.5
1.2 V GS =10V
0.9
0.6
0.3
0 1 3.