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SDP07N50 Dataheets PDF



Part Number SDP07N50
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDP07N50 DatasheetSDP07N50 Datasheet (PDF)

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP07N50 SDF07N50 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 7A 0.76 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP07N50HZ TO-220 SDP07N50PZ TO-220 SDF07N50HZ TO-220F SDF07N50PZ TO-220F Marking Code SDP07N50 07N50 SDF07N50 .

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP07N50 SDF07N50 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 7A 0.76 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP07N50HZ TO-220 SDP07N50PZ TO-220 SDF07N50HZ TO-220F SDF07N50PZ TO-220F Marking Code SDP07N50 07N50 SDF07N50 07N50 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP07N50 SDF07N50 VDS Drain-Source Voltage VGS Gate-Source Voltage 500 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 77 4.9 4.9 IDM -Pulsed a 20 20 EAS Single Pulse Avalanche Energy c 6 PD Maximum Power Dissipation TC=25°C TC=100°C 88 29 44 15 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.7 5.1 62.5 62.5 °C/W °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP07N50 SDF07N50 Ver 2.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±30V , VDS=0V 500 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=3.5A VDS=20V , ID=3.5A VDS=25V,VGS=0V f=1.0MHz VDD=250V ID=1A VGS=10V RGEN= 6 ohm VDS=250V,ID=1A,VGS=10V VDS=250V,ID=1A, VGS=10V 2 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=4A Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12) Typ Max Units 1 ±100 V uA nA 3 4V 0.76 0.93 ohm 7.6 S 916 pF 104 pF 16 pF 37 ns 20 ns 42 ns 15 ns 21 nC 3.6 nC 9 nC 0.81 1.4 V Dec,24,2013 2 www.samhop.com.tw ID, Drain Current(A) SDP07N50 SDF07N50 20 VGS =10V 16 VGS =7V 12 8 VGS =6V 4 VGS =5V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics ID, Drain Current(A) Ver 2.1 9.0 7.2 5.4 3.6 T j=125 C 1.8 25 C -55 C 0 0 1.2 2.4 3.6 4.8 6.0 7.2 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics RDS(on)(Ω) 1.8 1.5 1.2 V GS =10V 0.9 0.6 0.3 0 1 3.


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