Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP06N60
SDF06N60
Ver 2.1
PRODUCT S...
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
SDP06N60
SDF06N60
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V
6A
1.3 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP06N60HZ
TO-220
SDP06N60PZ
TO-220
SDF06N60HZ
TO-220F
SDF06N60PZ
TO-220F
Marking Code SDP06N60 06N60 SDF06N60 06N60
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP06N60 SDF06N60
VDS Drain-Source Voltage VGS Gate-Source Voltage
600 ±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
66 4.2 4.2
IDM -Pulsed a
18 18
EAS Single Pulse Avalanche Energy c
361
PD
Maximum Power Dissipation
TC=25°C TC=100°C
107 36 54 18
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.4 4.2 62.5 62.5
°C/W °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP06N60 SDF06N60
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate...