C2M0040120D

VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency TO-247-3 Applications Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Battery Chargers Motor Drives Pulsed Power Applications Part Number C2M0040120D Package TO-247-3 Marking C2M0040120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current ID(pulse) Pulsed Drain Current 1200 -10/+25 -5/+20 55 36 160 V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values VGS = 20 V, TC = 25˚C A VGS = 20 V, TC = 100˚C A Pulse width tP limited by Tjmax PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque 278 -55 to +150 260 1 8.8 W TC=25˚C, TJ = 150 ˚C ˚C ˚C 1.6mm (0.063”) from case for 10s Nm lbf-in M3 or 6-32 screw Note Fig. 19 Fig. 22 Fig. 20 1 C2M0040120D Rev. 3, 04-2021 Electrical Characteristics (...