ACE4010M

ACE4010M N-Channel 100-V MOSFET Description ACE4010M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 100 ±20 26 50 50 50 -55 to 175 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Case Symbol Maximum Unit RθJA RθJC 40 °C/W 3 Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics. b. Pulse width limited by maximum junction temperature. VER 1.1 1 Packaging Type TO-252 GDS Ordering information ACE4010M YM+ H Halogen - free Pb - free YM : TO-252 ACE4010M N-Channel 100-V MOSFET VER 1.1 2 ACE4010M N-Channel 100-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Static Gate-Source Threshold Voltage VGS(th...