ACE3926E

ACE3926E Dual N-Channel 20-V MOSFET Description The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 20 V VGS ±12 V 13 ID A 10 IDM 50 A IS 7 A 2.5 PD W 1.5 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 83 120 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN3*3-8L ACE3926E Dual N-Channel 20-V MOSFET Ordering information ACE3926E NN + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 2 ACE3926E Dual N-Channel 20-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VG...