N-Channel MOSFET
ACE2390M
N-Channel 150-V MOSFET
Description ACE2390M uses advanced trench technology to provide excellent RDS(ON). This...
Description
ACE2390M
N-Channel 150-V MOSFET
Description ACE2390M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology Low thermal impedance Fast switching speed
Applications:
PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta Pulsed Drain Current b
TA=25°C TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM IS
PD
TJ, Tstg
Limit
150 ±20 1.1 0.9
5 1.6 1.3 0.8 -55 to 150
Unit V
A A W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient a
t<=10sec Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
VER 1.1 1
Packaging Type
ACE2390M
N-Channel 150-V MOSFET
Ordering information
ACE2390M BM + H Halogen - free Pb - free
BM : SOT-23-3
VER 1.1 2
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward...
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