ACE2358M

ACE2358M N-Channel 60-V MOSFET Description ACE2358M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulse Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% Symbol VDS VGS ID IDM IS PD TJ/TSTG Limit 60 ±20 3.1 2.5 1.5 1.9 1.3 0.8 -55/150 Units V V A A A W OC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA 100 166 Units OC/W VER 1.1 1 Packaging Type SOT-23-3 D GS Ordering information ACE2358MBM + H Halogen - free Pb - free BM : SOT-23-3 ACE2358M N-Channel 60-V MOSFET VER 1.1 2 ACE2358M N-Channel 60-V MOSFET Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance ...