MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
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MJE700 THRU MJE703
PNP MJE800 THRU MJE803
NPN
COMPLEMENTARY POWER DARLINGTON
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington
transistors designed for audio amplifier applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC
MJE700 MJE701 MJE800 MJE801
60
MJE702 MJE703 MJE802 MJE803
80
60 80
5.0
4.0
100
40
-65 to +150
3.13
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TC=100°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (MJE702,703,802,803)
80
BVCEO
IC=50mA (MJE700,701,800,801)
60
VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802)
VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803)
VCE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=1.5A (MJE700,702,800,802)
VBE(ON)
VCE=3.0V, IC=2.0A (MJE701,703,801,803)
VBE(ON)
VCE=3.0V, IC=4.0A
hFE VCE=3.0V, IC=1.5A (MJE700,702,800,802) 750
hFE VCE=3.0V, IC=2.0A (MJE701,703,801,803) 750
hFE VCE=3.0V, IC=4.0A
100
fT VCE=3.0V, IC=1.5A, f=1.0MHz
1.0
MAX 100 500 100 2.0
2.5 2.8 3.0 2.5 2.5 3.0
UNITS V V V A mA W °C...