MMBD6050LT1

RoHS MONOLITHIC DUAL SWITCHING DIODE MMBD6050LT1 DABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating TReverse Voltage VR 70 .,LForward Current IF 200 Peak Forward surge Current IFM(surge) 500 Total Device Dissipation FR-5 PD 225 Board(Note) ODerate above 25 1.8 Junction Temperature Tj 150 CStorage Temperature Tstg -55-150 Unit Vdc Vdc mAdc mW mW/ Package:SOT-23 ICELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Max Unit NReverse Breakdown Voltage(IR=100uAdc) Reverse Voltage Leakage Current V(BR) 75 Vdc O(VR=50Vdc) IR 0.1 uAdc Diode Capacitance(VR=0 f=1.0MHz) CT PF RForward Voltage VF Vdc (IF=1.0mAdc) 0.55 0.7 T(IF=100mAdc) 0.85 1.1 Reverse Recovery Time(IF=IR=10mAdc) Trr 2.5 ns ECNote:FR-5=1.0 0.75 0.062in DVICE MARKING: WEJ ELMMBD6050LT1=5A WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...