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1SS355

Taiwan Semiconductor

200mW High Speed SMD Switching Diode

Small Signal Product 1SS355 Taiwan Semiconductor 200mW High Speed SMD Switching Diode FEATURES - Fast switching devic...


Taiwan Semiconductor

1SS355

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Description
Small Signal Product 1SS355 Taiwan Semiconductor 200mW High Speed SMD Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOD-323F MECHANICAL DATA - Case: Flat lead SOD-323F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 6 ± 0.5mg - Marking code: S4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage VRRM 90 Reverse Voltage VR 80 Minimum Breakdown Voltage at IR = 100μA VBR 80 Forward Current IF 250 Continue Forward Current IO 150 Repetitive Peak Forward Voltage IFSM 500 Maximum Reverse Leakage Current at VR = 80V IR 100 Maximum Forward Voltage at IF = 100mA VF 1.2 Maximum Reverse Recovery Time at IF = 10mA, VR = 6V, RL = 100 Ohms trr 4 Maximum Junction Capacitance at VR = 0.5V, f = 1MHz Cj 4 OperatingTemperature Range TOPR - 65 to +150 Storage Temperature Range TSTG - 65 to +150 Note : These ratings are limiting values above which the serviceability of the diode may be impaired UNIT mW V V V mA mA mA nA V ns pF oC oC Document Numbe...




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