Document
Small Signal Product
FEATURES
225mW SMD Switching Diode
- Low turn-on voltage
- Fast switching - PN junction guard ring for transient and ESD protection
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
MECHANICAL DATA
- Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air
(Note 1) @ t ≦ 1.0 s
(Note 1) (Note 1)
VRRM VRWM
VR VR(RMS)
IF IFSM PD RθJA
70
49 70 100 200 625
Operating Junction Temperature Storage Temperature Range
TJ TSTG
-55 to + 125 -55 to + 150
PARAMETER
Reverse breakdown voltage
IR = 10 µA
Forward voltage
tp=300µs , IF=1.0mA tp<300µs , IF=15mA
Reverse leakage current
tp<300µs , VR=50V
Junction capacitance
VR = 0 V, f = 1 MHz
Reverse revovery time
IF = IR = 10 mA, IRR = 100 Ω, IRR = 1 mA
Notes: 1. Valid provided that terminals are kept at ambient temperature
2. Test period < 3000 µs
SYMBOL V(BR)
VF
IR CJ trr
MIN
70 -
MAX
410 1000 100.00
2 5
UNIT
V
V mA mA mW K/W °C °C
UNIT V
mV
nA pF ns
Document Number: DS_S1404012
Version: E14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted) Fig.1 Power Derating Curve
200
PD - Power Dissipation (mW)
100
0 0
100
25 50 75 100 TA - Ambient Temperature (oC)
125
Fig. 3 Typical Forward Characteristics
Instantaneous Forward Current (mA)
10
TA= -40 °C 1 TA= 0 °C
TA= 25 °C TA= 75 °C
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, Instantaneous Forward Voltage (V)
Fig. 5 Typical Total Capacitance VS. Reverse Voltage f=1.0MHz
2
Junction Capacitance (pF)
1
0 0
5 10 15 20
Reverse Voltage (V)
Document Number: DS_S1404012
Transient Thermal Impedance (oC/W)
IR - Instantaneous Reverse Current (nnA)
Peak Forward Surge Current (mA)
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Fig. 2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg
100 8.3 ms single half sine wave (JEDEC Method)
50
0 1
10 Numbers of Cycles at 60 Hz
100
10000 1000 100 10 1 0.1 0
Fig. 4 Typical Reverse Characteristics TA=125 °C
TA=70 °C
TA=25 °C
TA=0 °C
TA= -40 °C
10 20 30 VR - Reverse Voltage (V)
40
Fig. 6 Typical Transient Thermal Characteristics 100
10
1
0.1 0.01
0.1 1 10 Pulse Duration (sec)
100
Version: E14
Small Signal Product
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MANUFACTURE CODE
BAS70
PACKING CODE
RF
GREEN COMPOUND
CODE
PACKAGE
G SOT-23
PACKING 3K / 7" Reel
MARKING 73
BAS70-04 BAS70-05
(Note)
RF
G
SOT-23
3K / 7" Reel
74
RF
G
SOT-23
3K / 7" Reel
75
BAS70-06
RF G
Note: Manufacture special control, if empty means no special control requirement.
SOT-23
3K / 7" Reel
76
EXAMPLE
PREFERRED P/N PART NO.
MANUFACTURE CODE
BAS70 RFG BAS70-B0 RFG BAS70-D0 RFG
BAS70 BAS70 BAS70
B0 D0
PACKING CODE
RF RF RF
GREEN COMPOUND
CODE
G G G
DESCRIPTION
Green compound Green compound Green compound
Document Number: DS_S1404012
Version: E14
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
SUGGEST PAD LAYOUT
Pin Configuration
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
DIM.
A B C D E F G H
Unit (mm)
Min Max
2.70 3.10 1.10 1.50 0.30 0.51 1.78 2.04 2.10 2.64 0.89 1.30
0.55 REF 0.1 REF
Unit (inch)
Min Max
0.106 0.122 0.043 0.059 0.012 0.020 0.070 0.080 0.083 0.104 0.035 0.051
0.022 REF 0.004 REF
DIM.
Z X Y C E
Unit (mm) Typ. 2.9 0.8 0.9 2.0 1.35
Unit (inch) Typ. 0.114 0.031 0.035 0.079 0.053
BAS70
BAS70-04
BAS70-05
BAS70-06
Document Number: DS_S1404012
Version: E14
.