MS23N18

MS23N18 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed RoHS compliant package Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23N18] © Bruckewell Technology Corporation Rev. A -2014 MS23N18 N-Channel 30-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA =25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) TJ/TSTG Operating Junction and Storage Temperature Value 30 ±20 2.4 1.9 10 1.9 1.3 0.8 -55 to +150 Unit V V A A A A W W °C Thermal Resistance Ratings Symbol Parameter Maximum Junction-to-Ambient C/Wa (t <= 10 sec) RθJA Maximum Junction-to-Ambient C/Wa (Ste...