MS75N075

MS75N75 75V N-Channel MOSFET Features RDS(on) (Max 0.017 Ω )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C) RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current –Pulsed VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC=25°C) - Derate above 25°C TJ/TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds ●Drain current limited by maximum junction temperature Value 75 75 52.5 300 ±20 1350 9 7.0 190 1.27 -55 to +150 300 Unit V A A A V mJ mJ V/ns W W/°C °C °C Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014 MS75N75 75V N-Channel MOSFET Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Typ. --- Max. 1.43 62.5 Units °C/W On Characteristics Symbol Parameter VGS Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions VDS = VGS,ID = 250μA VGS = 10 V,ID = 3.75 A Min Typ. Max. Units 2.0 -- 4.0 V -- ...