MMBD4448W

RoHS MMBD4448W MMBD4448W SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IO: 250 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1. 01 REF NICMarking: KA3 TROELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) CParameter EReverse breakdown voltage LReverse voltage leakage current EForward voltage EJDiode capacitance WReverse recovery time Symbol V(BR) R IR VF CD t rr Test conditions IR= 10µA VR=20V VR=75V IF=5mA IF=10mA IF=100mA IF=150mA VR=0V, f=1MHz IF=IR=10mA Irr=0.1×IR ,RL=100Ω MIN 75 MAX 0.025 2.5 0.72 0.855 1 1.25 4 4 UNIT V µA V pF nS Test period <3000µs. WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...