STW35N60DM2

STW35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS STW35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STW35N60DM2 Table 1: Device summary Marking 35N60DM2 Package TO-247 Packing Tube September 2015 DocID028306 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents Contents STW35N60DM2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .............................................