STS9P2UH7
P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package
Datasheet - production data
5 8
1
SO-8
4
Figure 1: Internal schematic diagram
Features
Order code STS9P2UH7
VDS 20 V
RDS(on) max 0.0225 Ω @ 4.5 V
ID 9A
Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Ultra logic le...
