STS7P4LLF6

STS7P4LLF6 Datasheet P-channel 40 V, 17.5 mΩ typ., 7 A, STripFET F6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01475v4 Features Order code VDS STS7P4LLF6 40 V Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss RDS(on) max. ID 20.5 mΩ 7A Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS7P4LLF6 Product summary Order code STS7P4LLF6 Marking 7K4L Package SO-8 Packing Tape and reel Note: For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DS10067 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: STS7P4LLF6 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25 °C ID Drain current (continuous) at Tamb = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tamb = 25 °C Tstg Storage temperature range TJ Maximum junction temperature 1. Pulse width limited by safe operating area. Value 40 ±20 7 4.2 28 2.7 -55 to 150 150 Table 2. Thermal data Symbol Parameter RthJA (1) Thermal resistance, junct...