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MBRF1645 Dataheets PDF



Part Number MBRF1645
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Schottky Barrier Rectifier
Datasheet MBRF1645 DatasheetMBRF1645 Datasheet (PDF)

MBRF1635 - MBRF16150 Taiwan Semiconductor CREAT BY ART 16A, 35V - 150V Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: ITO-220AC Molding compound: UL flammability classification rating 94V-0 Part no. with suffix "H" mea.

  MBRF1645   MBRF1645



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MBRF1635 - MBRF16150 Taiwan Semiconductor CREAT BY ART 16A, 35V - 150V Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guard ring for over-voltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: ITO-220AC Molding compound: UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) 1 2 ITO-220AC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER MBRF MBRF MBRF MBRF MBRF MBRF MBRF SYMBOL UNIT 1635 1645 1650 1660 1690 16100 16150 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 16 A Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM 32 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=16A, TJ=25°C IF=16A, TJ=125°C IRRM 1 VF 0.63 0.57 0.5 A 0.75 0.85 0.95 V 0.65 0.75 0.92 Maximum reverse current @ rated VR Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz TJ=25°C TJ=125°C IR dV/dt RθJC TJ TSTG 0.5 0.3 15 10 7.5 10000 3 - 55 to +150 - 55 to +150 0.1 mA 5 V/μs °C/W °C °C Note 2: Pulse test with PW=300μs, 1% duty cycle Version: J1512 CREAT BY ART ORDERING INFORMATION PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX (*) MBRF16xx (Note 1) H C0 G Note 1: "xx" defines voltage from 35V (MBRF1635) to 150V (MBRF16150) *: Optional available EXAMPLE EXAMPLE P/N PART NO. MBRF1660HC0G MBRF1660 PART NO. SUFFIX H PACKING CODE C0 MBRF1635 - MBRF16150 Taiwan Semiconductor PACKAGE ITO-220AC PACKING 50 / Tube PACKING CODE SUFFIX G DESCRIPTION AEC-Q101 qualified Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 20 16 12 8 4 Resistive or inductive load with heat sink 0 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (°C) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 Pulse Width=300μs 1% Duty Cycle 10 TJ=125°C 1 TJ=25°C PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 125 8.3ms single half sine wave 100 75 50 25 0 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 TJ=125°C 10 1 TJ=25°C 0.1 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 0.1 MBRF1635-1645 MBRF1650-1660 MBRF1690-16150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) 0.01 MBRF1635-1645 MBRF1650-16150 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: J1512 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (°C/W) 10000 CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p 1000 MBRF1635 - MBRF16150 Taiwan Semiconductor FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 100 0.1 1 10 REVERSE VOLTAGE (V) 0.1 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS ITO-220AC DIM. A B C D E F G H I J K L M N O P Unit (mm) Min Max 4.30 4.70 2.50 3.10 2.30 2.90 0.46 0.76 6.30 6.90 9.60 10.30 3.00 3.40 0.00 1.60 0.95 1.45 0.50 0.90 2.40 3.20 14.80 15.50 - 4.10 - 1.80 12.60 13.80 4.95 5.20 Unit (inch) Min Max 0.169 0.185 0.098 0.122 0.091 0.114 0.018 0.030 0.248 0.272 0.378 0.406 0.118 0.134 0.000 0.063 0.037 0.057 0.020 0.035 0.094 0.126 0.583 0.610 - 0.161 - 0.071 0.496 0.543 0.195 0.205 MARKING DIAGRAM P/N G YWW F = Specific Device Code = Green Compound = Date Code = Factory Code Version: J1512 CREAT BY ART MBRF1635 - MBRF16150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC produc.


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