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HGA40N120FV

Part Number	HGA40N120FV
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HGA40N120FV HGA40N120FV 1200V Field Stop Trench IGBT FEATURES  1200V Field Stop Trench Technology  Low Saturation Vol...
Datasheet	HGA40N120FV PDF File

Overview

HGA40N120FV HGA40N120FV 1200V Field Stop Trench IGBT FEATURES  1200V Field Stop Trench Technology  Low Saturation Voltage  High Switching Frequency  Very Soft, Fast Recovery Anti-parallel diode APPLICATION  Welding Converters  Uninterruptible Power Supply  General Purpose Inverters March 2015 VCES = 1200 V IC = 40 A VCE(sat) typ = 2.
0 V TO-247 GC E Absolute Maximum Ratings Symbol VCES IC ICM IF IFM VGES PD TJ, TSTG TL Parameter Collector-Emitter Voltage Collector Current Collector Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) Collector Current – Pulsed (Note 1) Diode Forward Current – Continuous (TC = 100℃) Diode Maximum Forward Current Gate-Emitter Voltage P...

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HGA40N120FV N-Channel MOSFET - SemiHow

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