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HFD2N90

N-Channel MOSFET

Description

HFD2N90_HFU2N90 Feb 2014 HFD2N90/HFU2N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 2.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area ...

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