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HFT1N60S

SemiHow
Part Number HFT1N60S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A FEATURES ‰ Originative ...
Datasheet PDF File HFT1N60S PDF File

HFT1N60S
HFT1N60S

Overview
HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.
2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.
0 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested SOT-223 2 3 1 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Puls...


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