Document
HFS12N65U
HFS12N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7\S #9GS=10V 100% Avalanche Tested
July 2014
BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 12* 7.4* 48* ρ30 840 12 5.2 4.5
PD TJ, TSTG TL
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
52 0.42 -55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 2.4 62.5
Units V A A A V mJ A mJ
V/ns W
W/
Units
/W
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HFS12N65U
Package Marking and Odering Information
Device Marking HFS12N65U HFS12N65U
Week Marking YWWX YWWXg
Package TO-220F TO-220F
Packing Tube Tube
Quantity 50 50
RoHS Status Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
On Characteristics
Min
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6 A
Off Characteristics
BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125 VGS = ρ30 V, VDS = 0 V
2.5 --
650 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 325 V, ID = 12 A, RG = 25
(Note 4,5)
VDS = 520V, ID = 12 A, VGS = 10 V
(Note 4,5)
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 12 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4)
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--
Typ Max Units
-- 4.5 0.67 0.78
V
-- -- V -- 1 Ꮃ -- 10 Ꮃ -- ρ100 Ꮂ
2100 170 11
2750 220 14.5
Ꮔ Ꮔ Ꮔ
55 120 45 100 145 300 25 60 42 55 12 -12 --
Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC
-- .