BUJD203A
NPN power transistor with integrated diode
Rev. 02 — 2 December 2010
Product data sheet
1. Product profile
...
BUJD203A
NPN power
transistor with integrated diode
Rev. 02 — 2 December 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated
NPN power switching
transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.
1.2 Features and benefits
Fast switching High voltage capability
Integrated anti-parallel E-C diode
Very low switching and conduction losses
1.3 Applications
DC-to-DC converters Electronic lighting ballasts
Inverters Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC; see Figure 4
Ptot
total power
see Figure 3; Tmb ≤ 25 °C
dissipation
VCESM
collector-emitter VBE = 0 V peak voltage
Static characteristics
hFE VCEOsus
DC current gain IC = 500 mA; VCE = 5 V; see Figure 11; Tj = 25 °C
VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 11
collector-emitter IB = 0 A; LC = 25 mH; sustaining voltage IC = 10 mA; see Figure 6;
see Figure 7
Min Typ Max Unit - - 4A
- - 80 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
NXP Semiconductors
BUJD203A
NPN power
transistor with integrated diode
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description B base C collector E emitter C mounting base; connected to
collector
Simplified outline
mb
Graphic symbol
C
B
E sym131
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering inform...