BUJD203A

BUJD203A NPN power transistor with integrated diode Rev. 02 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package. 1.2 Features and benefits  Fast switching  High voltage capability  Integrated anti-parallel E-C diode  Very low switching and conduction losses 1.3 Applications  DC-to-DC converters  Electronic lighting ballasts  Inverters  Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; DC; see Figure 4 Ptot total power see Figure 3; Tmb ≤ 25 °C dissipation VCESM collector-emitter VBE = 0 V peak voltage Static characteristics hFE VCEOsus DC current gain IC = 500 mA; VCE = 5 V; see Figure 11; Tj = 25 °C VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 11 collector-emitter IB = 0 A; LC = 25 mH; sustaining voltage IC = 10 mA; see Figure 6; see Figure 7 Min Typ Max Unit - - 4A - - 80 W - - 850 V 13 21 32 - 12.5 - 400 450 - V NXP Semiconductors BUJD203A NPN power transistor with integrated diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description B base C collector E emitter C mounting base; connected to collector Simplified outline mb Graphic symbol C B E sym131 3. Ordering information 123 SOT78 (TO-220AB) Table 3. Ordering inform...