BUJD203AD

BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Integrated anti-parallel E-C diode „ Surface-mountable package „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC converters „ Electronic lighting ballasts „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; DC; see Figure 4 Ptot total power dissipation see Figure 3; Tmb ≤ 25 °C VCESM collector-emitter peak voltage VBE = 0 V Static characteristics hFE DC current gain IC = 500 mA; VCE = 5 V; see Figure 12; Tmb = 25 °C VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 12 VCEOsus collector-emitter IB = 0 A; LC = 25 mH; IC = 10 mA; sustaining voltage see Figure 7; see Figure 8 Min Typ Max Unit - - 4A - - 80 W - - 850 V 13 21 32 - 12.5 - 400 450 - V NXP Semiconductors BUJD203AD NPN power transistor with integrated diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description Simplified outline B base C collector[1] mb E emitter C mounting base; connected to collector 2 13 SOT428 (DPAK) [1] it is not p...