627%
BFU530
NPN wideband silicon RF transistor
Rev. 1 — 5 March 2014
Product data sheet
1. Product profile
1.1 Ge...
627%
BFU530
NPN wideband silicon RF
transistor
Rev. 1 — 5 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF
transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.
The BFU530 is part of the BFU5 family of
transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF
transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.7 dB at 900 MHz Maximum stable gain 21.5 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 10 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 15 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 10 40 mA
[1] -
-
450 mW
60 95 200
- 0.65 -
pF
- 11 -
GHz
NXP Semiconductors
BFU530
NPN wideband silicon RF
transistor
Table 1. Quick reference data …continued Tamb = 25 ...