Document
627
BFU590Q
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.
The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor AEC-Q101 qualified Maximum stable gain 11 dB at 900 MHz PL(1dB) 22 dBm at 900 MHz 8 GHz fT silicon technology
1.3 Applications
Automotive applications Broadband amplifiers Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz) Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 90 C
hFE DC current gain
IC = 80 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] -
-
60 95
- 2.0
- 8.0
Max Unit 24 V 12 V 24 V 2V 200 mA 2000 mW 130 - pF - GHz
NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max) PL(1dB)
maximum power gain
output power at 1 dB gain compression
IC = 80 mA; VCE = 8 V; f = 900 MHz
IC = 80 mA; VCE = 8 V; ZS = ZL = 50 ; f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead. [2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min Typ
[2] -
11
- 22
Max Unit - dB - dBm
Table 2. Pin 1 2 3
Discrete pinning Description emitter collector base
Simplified outline Graphic symbol
DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU590Q
-
plastic surface-mounted package; exposed die pad with good heat transfer; 3 leads
OM7965 - Customer evaluation kit for BFU580Q and BFU590Q [1]
[1] The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU580Q and BFU590Q samples e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4. Marking Type number BFU590Q
Marking S59
Version SOT89 -
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 19
NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
5. Design support
Table 5. Available design support Download from the BFU590Q product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS yes
Based on Mextram device model.
SPICE model
yes Based on Gummel-Poon device model.
S-parameters
yes
Customer evaluation kit
yes See Section 3 and Section 10.
Solder pattern
yes
Application notes
yes See Section 10.1 and Section 10.2.
6. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCB collector-base voltage VCE collector-emitter voltage
open emitter open base shorted base
VEB IC Tstg VESD
emitter-base voltage collector current storage temperature electrostatic discharge voltage
open collector
Human Body Model (HBM) According to JEDEC standard 22-A114E
Charged Device Model (CDM) According to JEDEC standard 22-C101B
7. Recommended operating conditions
Min Max Unit
- 30 V
- 16 V
- 30 V
-3
V
- 300 mA
65 +150 C
- 250 V
- 2 kV
Table 7. Symbol VCB VCE
Characteristics Parameter collector-base voltage collector-emitter voltage
VEB emitter-base voltage IC collector current Pi input power Tj junction temperature Ptot total power dissipation
Conditions open emitter open base shorted base open collector
ZS = 50
Tsp 90 C
[1] Tsp is the temperature at the solder point of the collector lead.
Min Typ Max Unit
- - 24 V
- - 12 V
- - 24 V
--2
V
- - 200 mA
- - 20 dBm
40 -
+150 C
[1] - - 2000 mW
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 19
NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
8. Thermal characteristics
Table 8. Symbol Rth(j-sp)
Thermal characteristics Parameter thermal resistance from junction to solder point
Conditions
Typ Unit [1.