627
BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 G...
627
BFU590G
NPN wideband silicon RF
transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave
transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU590G is part of the BFU5 family of
transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF
transistor AEC-Q101 qualified Maximum stable gain 13 dB at 900 MHz PL(1dB) 21.5 dBm at 900 MHz 8.5 GHz fT silicon technology
1.3 Applications
Automotive applications Broadband amplifiers Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz) Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 90 C
hFE DC current gain
IC = 80 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] -
-
60 95
- 1.9
- 8.5
Max Unit 24 V 12 V 24 V 2V 200 mA 2000 mW 130 - pF - GHz
NXP Semiconductors
BFU590G
NPN wideband silicon RF
transistor
Table 1. Quick reference data …continued Tamb = 25 C unles...