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STF28N60DM2 Dataheets PDF



Part Number STF28N60DM2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STF28N60DM2 DatasheetSTF28N60DM2 Datasheet (PDF)

STF28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code STF28N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.16 Ω ID PTOT 21 A 30 W 3 2 1 TO-220FP Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STF28N6.

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STF28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code STF28N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.16 Ω ID PTOT 21 A 30 W 3 2 1 TO-220FP Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STF28N60DM2 Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking 28N60DM2 Package TO-220FP Packing Tube October 2015 DocID026863 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents Contents STF28N60DM2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ........................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID026863 Rev 2 STF28N60DM2 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID IDM(1) PTOT dv/dt(2) dv/dt(3) VISO(4) Tstg Tj Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness Insulation withstand voltage (RMS) from all three leads to external heat sink Storage temperature Operating junction temperature ±25 21 14 84 30 50 50 2.5 -55 to 150 V A A W V/ns kV °C Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 21 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V (3) VDS ≤ 480 V. (4)t = 1 s; TC = 25 °C Symbol Rthj-case Rthj-amb Table 3: Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient Value 4.2 62.5 Unit °C/W Symbol IAR(1) EAS(2) Table 4: Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive Single pulse avalanche energy Notes: (1) pulse width limited by Tjmax (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. Value 4 350 Unit A mJ DocID026863 Rev 2 3/12 Electrical characteristics STF28N60DM2 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA VGS = 0 V, VDS = 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V, Tcase = 125 °C IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10.5 A Min. Typ. Max. Unit 600 V 1 µA 100 ±10 µA 34 5V 0.13 0.16 Ω Symbol Ciss Coss Crss Coss eq.(1) RG Qg Qgs Qgd Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Table 6: Dynamic Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V VDS = 0 to 480 V, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 480 V, ID = 21 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") Min. Typ. Max. Unit - 1500 - 70 - pF - 1.6 - - 134 - - 4.6 - 34 -8 - 18.5 - pF Ω nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 7: Switching times Test conditions VDD = 300 V, ID = 10.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") Min. Typ. Max. Unit - 16 - 7.3 - 53 - ns - 9.3 - 4/12 DocID026863 Rev 2 STF28N60DM2 Symbol ISD(1) ISDM(2) VSD(3) trr Qrr IRRM trr Qrr IRRM Parameter Table 8: Source-drain diode Test conditions Electrical characteristics Min. Typ. Max. Unit Source-drain current - 21 A Source-drain current (pulsed) - 84 A Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current VGS = 0 V, ISD = 21 A ISD = 21 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circu.


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