Document
STF28N60DM2
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code STF28N60DM2
VDS @ TJmax.
650 V
RDS(on) max.
0.16 Ω
ID PTOT 21 A 30 W
3 2 1
TO-220FP
Figure 1: Internal schematic diagram
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Order code STF28N60DM2
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Table 1: Device summary Marking
28N60DM2
Package TO-220FP
Packing Tube
October 2015
DocID026863 Rev 2
This is information on a product in full production.
1/12
www.st.com
Contents
Contents
STF28N60DM2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220FP package information ........................................................ 9
5 Revision history ............................................................................ 11
2/12 DocID026863 Rev 2
STF28N60DM2
Electrical ratings
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings Parameter
Value
Unit
VGS
ID
IDM(1) PTOT dv/dt(2) dv/dt(3) VISO(4)
Tstg Tj
Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) Total dissipation at Tcase = 25 °C Peak diode recovery voltage slope MOSFET dv/dt ruggedness Insulation withstand voltage (RMS) from all three leads to external heat sink Storage temperature Operating junction temperature
±25 21 14 84 30 50 50
2.5
-55 to 150
V A A W V/ns
kV
°C
Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 21 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V (3) VDS ≤ 480 V. (4)t = 1 s; TC = 25 °C
Symbol Rthj-case Rthj-amb
Table 3: Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient
Value 4.2 62.5
Unit °C/W
Symbol IAR(1) EAS(2)
Table 4: Avalanche characteristics Parameter
Avalanche current, repetitive or not repetitive Single pulse avalanche energy
Notes: (1) pulse width limited by Tjmax (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Value 4
350
Unit A mJ
DocID026863 Rev 2
3/12
Electrical characteristics
STF28N60DM2
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 600 V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 10.5 A
Min. Typ. Max. Unit 600 V
1 µA
100
±10 µA
34 5V 0.13 0.16 Ω
Symbol Ciss Coss Crss
Coss eq.(1)
RG Qg Qgs Qgd
Parameter
Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Intrinsic gate resistance Total gate charge Gate-source charge
Gate-drain charge
Table 6: Dynamic Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
VDS = 0 to 480 V, VGS = 0 V
f = 1 MHz, ID = 0 A VDD = 480 V, ID = 21 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior")
Min. Typ. Max. Unit - 1500 - 70 - pF - 1.6 -
- 134 -
- 4.6 - 34 -8 - 18.5 -
pF Ω
nC
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol td(on) tr td(off)
tf
Parameter Turn-on delay time Rise time Turn-off delay time
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 10.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform")
Min. Typ. Max. Unit - 16 - 7.3 - 53 - ns
- 9.3 -
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STF28N60DM2
Symbol ISD(1) ISDM(2) VSD(3) trr Qrr
IRRM trr Qrr
IRRM
Parameter
Table 8: Source-drain diode Test conditions
Electrical characteristics Min. Typ. Max. Unit
Source-drain current
- 21 A
Source-drain current (pulsed)
- 84 A
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 21 A
ISD = 21 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circu.