Document
STD10NF30
Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY™ Power MOSFET in a DPAK package
Datasheet - production data
Features
TAB
3 1
DPAK
Order code STD10NF30
VDS 300 V
RDS(on)max. 0.33 Ω
ID 10 A
• Designed for automotive applications and AEC-Q101 qualified
• Gate charge minimized • Very low intrinsic capacitances
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
'Ć7$% *
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
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Order code STD10NF30
Table 1. Device summary
Marking
Packages
10NF30
DPAK
Packaging Tape and reel
March 2014
This is information on a product in full production.
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Contents
Contents
STD10NF30
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C
(1)
IDM Drain current (pulsed) PTOT Total dissipation at TC = 25 °C
(2)
dv/dt Peak diode recovery voltage slope
Tstg Storage temperature Tj Max. operating junction temperature
1. Pulse width limited by safe operating area 2. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD= 80% V(BR)DSS
300 ± 20 10 6.3 40 103 12
- 55 to 175
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value 1.45 50
Symbol
Table 4. Thermal data Parameter
Avalanche current, repetitive or notIAR repetitive (pulse width limited by Tj max)
Single pulse avalanche energy EAS
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Value 6
175
Unit V V A A A W
V/ns °C °C
Unit °C/W °C/W
Unit A mJ
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Electrical characteristics
2 Electrical characteristics
STD10NF30
(TC = 25 °C unless otherwise specified).
Symbol
Parameter
Table 5. On /off states Test conditions
Drain-source V(BR)DSS breakdown voltage
(VGS = 0)
ID = 1 mA
IDSS
Zero gate voltage
VDS = 300 V
drain current (VGS = 0) VDS = 300 V, TC=125 °C
IGSS
Gate-body leakage current (VDS = 0)
VGS = ± 20 V
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source RDS(on) on-resistance
VGS = 10 V, ID = 5 A
Min. Typ. Max. Unit
300 V
1 μA 10 μA ±100 nA 2 3 4V 0.28 0.33 Ω
Symbol
Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 6. Dynamic Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 240 V, ID = 10 A, VGS = 10 V (see Figure 14)
Min. Typ. Max. Unit - 780 - pF - 110 - pF
- 15 - pF
- 23 - nC - 3.5 - nC - 11.3 - nC
Symbol
Parameter
Table 7. Switching times Test conditions
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off-delay time Fall time
VDD = 150 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13)
Min. Typ. Max Unit - 13.5 - ns - 9.5 - ns - 32 - ns - 9.5 - ns
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STD10NF30
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10 A, VGS = 0
-
10 A 40 A 1.5 V
trr Reverse recovery time
- 145
ISD = 10 A, di/dt = 100 A/μs Qrr Reverse recovery charge VDD = 60 V (see Figure 18) - 0.76
IRRM Reverse recovery current
- 10.3
ns μC
A
trr Reverse recovery time
- 174 ISD = 10 A, di/dt = 100 A/μs
Qrr IRRM
Reverse recovery charge Reverse recovery current
VDD = 60 V, Tj = 150 °C (see Figure 18)
- 1.08 - 12.5
ns μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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Electrical characteristics
STD10NF30
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID AM18166v1 (A)
Figure 3. Thermal impedance
100 10µs
10 1 OpeLrimatiitoendinbythmisaaxrReaDSis(on)
0.1 0.1
1
100µs
Tj=175°C Tc=25°C Single pulse
1ms 1.