Ordering number:EN3972
PNP Epitaxial Planar Silicon Transistor
2SA1813
Low-Frequency General-Purpose Amplifier Driver, ...
Ordering number:EN3972
PNP Epitaxial Planar Silicon
Transistor
2SA1813
Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications
Features
· Very small-sized package permitting 2SA1813-
applied sets to be made smaller and slimmer.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage
(VCE(sat)≤0.3V). · High VEBO (VEBO≥15V).
Package Dimensions
unit:mm 2059A
[2SA1813]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Mounted on board
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Marking : KS
Symbol
Conditions
ICBO IEBO hFE
fT Cob VCE(sat) VBE(sat)
VCB=–20V, IE=0 VEB=–10V, IC=0 VCE=–5V, IC=–1mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz IC=–50mA, IB=–1mA IC=–50mA, IB=–1mA
1 : Base 2 : Emitter 3 : Collector
SANYO : MCP
Ratings –30 –25 –15
–150 –300
–30 200 150 –55 to +150
Unit V V V mA mA mA
mW ˚C ˚C
Ratings min typ
500 800 210 2.6
–0.15 –0.78
max –0.1 –0.1 1200
–0.3 –1.1
Unit
µA µA
MHz pF V V
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