STGW30M65DF2

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of minimum short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 50 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW30M65DF2 STGWA30M65DF2 Table 1: Device summary Marking Package G30M65DF2 TO-247 G30M65DF2 TO-247 long leads Packaging Tube Tube December 2015 DocID027768 Rev 3 This is information on a product in full production. 1/19 www.st.com Contents Contents STGW30M65DF2, STGWA30M65DF2 1 Electrical ratings............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..............