STGB10M65DF2

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGB10M65DF2 Table 1: Device summary Marking Package G10M65DF2 D²PAK Packing Tape and reel October 2015 DocID027429 Rev 5 This is information on a product in full production. 1/20 www.st.com Contents Contents STGB10M65DF2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 7 3 Test circuits ................................................................................... 13 4 ...